| 摘要 |
PROBLEM TO BE SOLVED: To make read-out operation high S/N in an MRAM using a memory cell storing information utilizing variation of magnetic resistance of an MTJ element. SOLUTION: A memory cell is constituted by comprising an MTJ element and a bipolar transistor QMC. Read-out operation is performed by current- amplifying a current IWL flowing the MTJ element by the bipolar transistor by selecting a word line WL and outputting it to a read-out data line DR. Thereby, high S/N read-out operation can be performed, a semiconductor device having an MRAM having high speed, high integration, and high reliability. |
