发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To solve the problems of a method for forming a pasting material of a semiconductor wafer and an auxiliary substrate by applying resin in multilayers that the process is intricate and the process for dicing the semiconductor wafer into individual semiconductor elements is long because etching is employed, and the problem of a method for stripping the semiconductor elements from the auxiliary substrate by dissolving the pasting material using a solvent that treatment of waste solvent requires a cost and a safety countermeasure. SOLUTION: A semiconductor wafer 1 in which an element is formed is coated, on the surface 1a thereof, with a layer of pasting material 11 and pasted to an auxiliary substrate 2. The semiconductor wafer 1 is then ground on the rear surface 1b thereof, and separated into individual semiconductor elements 13 by full cut dicing method. Subsequently, an adhesive sheet 14 is pasted to the rear surface 1b of the semiconductor element 13 in order to lower adhesion of the pasting material 11. The adhesive sheet 14 attached with the semiconductor element 13 is then stripped from the pasting material 11 having lowered adhesion.
申请公布号 JP2002367934(A) 申请公布日期 2002.12.20
申请号 JP20010177887 申请日期 2001.06.13
申请人 NEC KANSAI LTD 发明人 ARITA TAKASHI
分类号 H01L21/304;H01L21/301;(IPC1-7):H01L21/301 主分类号 H01L21/304
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