| 摘要 |
PROBLEM TO BE SOLVED: To promote miniaturization of an element. SOLUTION: The semiconductor element of a multi-layered wiring structure wherein a lower wiring layer is connected to an upper wiring layer positioned on the lower wring layer, includes a first rectangular metal 2 partially formed on a lower wiring layer 1 along the layer 1 and a second rectangular metal 4 partially formed under an upper wiring layer 5 along the layer 5. The lower and upper wiring layers 1 and 5 are connected to each other while the first and second rectangular metals 2 and 4 in contact with each other. |
