SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide an improved semiconductor device, where variations in breakdown-strength of a gate oxide film so that characteristics such as Vth and Ids are reduced. SOLUTION: A collector region is formed on a semiconductor substrate 1. An emitter electrode 20, an external base electrode 13, and gate electrodes (34 and 14) are formed on the semiconductor substrate. The position of the interface between the gate electrodes (34 and 14) and the semiconductor substrate 1 is set higher than that between the external base electrode 13 and the semiconductor substrate 1.