| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly efficient semiconductor device having a small amount of contaminating impurities in an element forming region, and to provide a manufacturing method of the semiconductor device. SOLUTION: On an n<+> single crystal semiconductor substrate 1, an n<-> epitaxial layer 2 that becomes a drain region is formed. At a surface layer in the n<-> epitaxial layer 2, a p well region 3 is formed, and at the same time an n<+> source region 4 is formed at the surface layer section of the p well region 3. On one portion of the p well region 3, and one portion of the n<+> source region 4, a gate electrode 6 is formed via a gate insulating film 5. The gate electrode 6 is covered with an insulating film 7 for forming a source electrode 8 on it. Additionally, on the back of the n<+> single crystal semiconductor substrate 1, a drain electrode 9 is formed. A cluster-contained layer 10 containing nitrogen is formed on the single crystal semiconductor substrate 1 to remove impurities effectively.
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