| 摘要 |
PROBLEM TO BE SOLVED: To reduce the ON-resistance per chip area of a lateral power MOSFET. SOLUTION: In this lateral power MOSFET, a low-resistance punched conductive area is provided from the surface of a semiconductor, within a p-type semiconductor region on a low-resistance p-type semiconductor wafer connected with an external source electrode to the p-type semiconductor region, at least two n-type drain regions which are electrically connected with a drain electrode are formed in the semiconductor region sandwiched between the low-resistance punched conductive regions, and an external drain region is provided on an active region. |
