| 发明名称 |
MANUFACTURING METHOD FOR MAGNETO-RESISTANCE EFFECT FILM |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a TMR film in microstructure of submicron order in high yield through a simple process. SOLUTION: The microstructure regarding a junction part of a tunnel magneto-resistance film 12 is formed by a lithography process using focused ion beam(FIB) drawing to prevent the problems of deterioration in shape caused by reflected electrons and electrostatic breakdown due to charging-up.</p> |
| 申请公布号 |
JP2002368307(A) |
申请公布日期 |
2002.12.20 |
| 申请号 |
JP20010175332 |
申请日期 |
2001.06.11 |
| 申请人 |
TOSHIBA CORP |
发明人 |
TAKAHASHI SHIGEKI |
| 分类号 |
G01R33/09;G11B5/39;G11C11/14;G11C11/15;H01L21/027;H01L21/302;H01L21/8246;H01L27/105;H01L43/08;H01L43/12;(IPC1-7):H01L43/12 |
主分类号 |
G01R33/09 |
| 代理机构 |
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