EXPOSING PATTERN SHARING METHOD, EXPOSING MASK GENERATING METHOD, EXPOSING MASK, SEMICONDUCTOR MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, EXPOSING PATTERN SHARING PROGRAM AND COMPUTER READABLE STORAGE MEDIUM STORING THE PROGRAM

摘要

PROBLEM TO BE SOLVED: To provide an exposing pattern sharing method for preventing disturbance of pattern on a semiconductor substrate by suppressing influence of stress generated on the exposing mask, exposing mask generating method, exposing mask, semiconductor manufacturing method, semiconductor device, exposing pattern sharing program, and a computer readable storage medium storing the program. SOLUTION: A Voronoi diagram where the center of patterns x1 to x20 is defined as the mother point pi is generated under the correspondence that distance between two mother points pi for generating a Voronoi side ai is weighted to each Voronoi side ai. The mother points pi is shared using the Voronoi diagram, and each pattern corresponding to each mother point pi is shared by x1 to x20 based on the sharing of this mother point pi.