NON-VOLATILE SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which the programming time of a memory cell can be drastically shortened. SOLUTION: This device is provided with: an address transition detecting circuit 11 for detecting the transition of an address signal and pre-charging a bit line to power source voltage Vdd for a fixed period; and a means with which, when a program verify-mode is performed from a program mode, source line voltage is controlled with a source line voltage control circuit 546 out of bias voltages applied to a memory cell 501 in programming and well line voltage is controlled with a well line voltage control circuit 545 to form a channel in a memory cell and to discriminate threshold voltage of a memory cell.