| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor film where crystal defects existing in the nitride semiconductor layer as a lower layer is controlled to be extended to the nitride semiconductor layer as an upper layer, and a method of manufacturing the same film. SOLUTION: There are provided a method of manufacturing a nitride semiconductor film. In the method, etch pit is formed by selective etching of crystal defects existing on the upper surface of a nitride semiconductor layer, and a new nitride semiconductor layer is grown on the nitride semiconductor layer in the manner that the etch pits are not filled perfectly. Two layers of nitride semiconductor layers are laminated wherein the etch pits are formed in the side of the nitride semiconductor layer as the lower layer at the interface of two layers, and density of crystal defects of the nitride semiconductor layer as the upper layer is lower than that of the nitride semiconductor layer as the lower layer.
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