| 摘要 |
PROBLEM TO BE SOLVED: To allow a chip from being selected on an outer periphery of a wafer even when a pattern is formed on the outer periphery of the wafer. SOLUTION: A method for manufacturing a semiconductor device comprises the steps of forming a silicon oxide film 2 and a silicon nitride film 3 on a surface of a silicon substrate 1, then patterning the films by a photolithography. Then, the outer periphery of the wafer is entirely exposed even at its inside. Thus, an effective pressure in the surface of the wafer at the time of CMP working to be executed after a trench 4 and an embedding oxide film 5 are formed can be made uniform, and thus good flattening can be executed. The method further comprises the steps of thereafter forming a first interlayer insulating film 11, and forming a contact hole 12 thereat. In this case, the contact hole is not formed on the outer periphery of the wafer. Thus, since wirings or the like are not formed on the outer periphery of the wafer in its structure, whether the chip is on the outer periphery of the wafer or not can be selected by an electric inspection.
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