发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device, the internal potential of which can be easily adjusted. SOLUTION: A system LSI comprises a signal generator 54 for giving 16 level setting signals PT0-PT3 to an internal power source potential generator circuit 4 one by one to increment an internal power source potential intVCC in 16 steps, a comparator circuit 44 for comparing each internal power source potential intVCC with a reference potential VR to output a signalϕ44 of a level, corresponding to the comparison result and a memory circuit 45 for temporarily storing the output signalϕ44 from the comparator circuit 44. This facilitates detection of optimum level setting signals PT0-PT3, based on an output signalϕT from the memory circuit 45.
申请公布号 JP2002368113(A) 申请公布日期 2002.12.20
申请号 JP20010176032 申请日期 2001.06.11
申请人 MITSUBISHI ELECTRIC CORP 发明人 OISHI TSUKASA
分类号 G01R31/28;G01R31/3183;G05F1/56;G11C5/14;G11C29/02;H01L21/822;H01L27/04;(IPC1-7):H01L21/822;G01R31/318;G11C29/00 主分类号 G01R31/28
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