| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of buried mesa semiconductor laser that causes little initial failure. SOLUTION: This method of manufacturing buried mesa semiconductor laser includes a step of forming a mesa stripe composed of an InP buffer layer 2, an InGaAsP active layer 3, and an InP clad layer 4 on an n-type InP substrate 1 and a step of causing low-temperature-grown InP protective layers 7 to deposit on both side sections 6 of the mesa stripe, by introducing a group III material gas (TMIn) for a prescribed period of time after the temperature of the substrate 1 is raised to <=550 deg.C while a group V material gas (PH3 ) is introduced. The method also includes a step of growing InP block layers 10 on the protective layers 7 by introducing the group III material gas (TMIn), a p-type dopant (DMZn), and an n-type dopant (Si2 H6 ) after the temperature of the substrate 1 is raised to about 600 deg.C while the group V material gas (PH3 ) is introduced.
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