发明名称 |
METHOD FOR DESORBING SILICON AND METHOD FOR ANALYZING IMPURITIES IN SILICON WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for desorbing silicon easily with low contamination from a solution containing silicon before thrown into an analyzer without affected by impurity contamination caused by operation or the chemical itself, and a method for analyzing impurities in a silicon wafer stably with high sensitivity by enhancing analytic sensitivity through application of the method for desorbing silicon. SOLUTION: In the method for desorbing silicon from a solution containing silicon, a solution containing silicon and a desorption solution containing hydrofluoric water and nitric acid are placed in the same enclosed container and each solution is heated for a specified time thus desorbing silicon in the solution containing silicon.
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申请公布号 |
JP2002368052(A) |
申请公布日期 |
2002.12.20 |
申请号 |
JP20010169843 |
申请日期 |
2001.06.05 |
申请人 |
SHIN ETSU HANDOTAI CO LTD |
发明人 |
ONISHI OSAMU;SATO MASAKAZU |
分类号 |
G01N1/04;C01B33/02;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
G01N1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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