发明名称 METHOD FOR DESORBING SILICON AND METHOD FOR ANALYZING IMPURITIES IN SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method for desorbing silicon easily with low contamination from a solution containing silicon before thrown into an analyzer without affected by impurity contamination caused by operation or the chemical itself, and a method for analyzing impurities in a silicon wafer stably with high sensitivity by enhancing analytic sensitivity through application of the method for desorbing silicon. SOLUTION: In the method for desorbing silicon from a solution containing silicon, a solution containing silicon and a desorption solution containing hydrofluoric water and nitric acid are placed in the same enclosed container and each solution is heated for a specified time thus desorbing silicon in the solution containing silicon.
申请公布号 JP2002368052(A) 申请公布日期 2002.12.20
申请号 JP20010169843 申请日期 2001.06.05
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 ONISHI OSAMU;SATO MASAKAZU
分类号 G01N1/04;C01B33/02;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01N1/04
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