| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can improve high-frequency characteristics by reducing the resistance due to an external base. SOLUTION: An N- type Si layer 6 that becomes a collector layer is formed while the layer 6 contacts an exposed N- type collector layer 4 on a P- type substrate 1. On the N- type Si layer 6, a P type SiGe layer 7 including intrinsic and external base regions is formed. On the P type SiGe layer 7, a P type Si layer 8 including N+ type emitter region 19 and the external base region is formed. On the Si layer 8, a P+ type SiGe layer 9 including the external base region is formed.
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