METHOD OF PROCESSING COMPOUND SEMICONDUCTOR MATERIAL, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a processing method for compensating or suppressing the defects left or created within an implantation layer by adding a process of irradiation of accelerated particles including elements belonging to a lower group of the periodic table out of the constituent elements of compound semiconductor material, when performing the valence electron control of the above compound semiconductor material by irradiation of particles including impurity atoms and anneal treatment for activation. SOLUTION: This method includes a process of irradiation of accelerated particles including impurity elements for valence electron control to a compound semiconductor material composed of group II and group VI elements a group III and group V elements, or the mixture of these crystals, a process of irradiation of accelerated particles including the elements belonging to a lower group out of the constituent elements of the above compound semiconductor material, and a process of heat-treating the above compound semiconductor material irradiated with particles.