METHOD FOR MANUFACTURING DUAL GATE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a dual gate of semiconductor devices is provided to prevent a penetration generating in a gate of a PMOS transistor by using a nitridation processing. CONSTITUTION: A gate insulating layer(104) and an amorphous silicon layer(106) are sequentially formed on a substrate(100) defined by a PMOS and NMOS transistor region. By performing a nitridation processing, a first and second nitridation region(110,112) are formed on the gate insulating layer(104) and the amorphous silicon layer(106), respectively. Boron ions are implanted to the PMOS transistor region by using a first photoresist pattern(108). Phosphorous ions are implanted to the NMOS transistor region by using a second photoresist pattern. A metal film is formed on the resultant structure. Then, a dual gate and a dual source/drain region are formed.