摘要 |
PROBLEM TO BE SOLVED: To suppress rise in Tj(junction temperature) by efficiently dissipating heat generated, in the case of connecting a plurality of transistor chips in parallel and turning them on/off simultaneously in a package. SOLUTION: In a semiconductor device having a large capacity which is used for an inverter, three IGBT chips are arranged on an insulation substrate 2. In this case, the chips 1a are arranged in zigzag manner, to connect them in parallel. Diode chips 1b are arranged in a region unoccupied by the chips 1a. |