发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress rise in Tj(junction temperature) by efficiently dissipating heat generated, in the case of connecting a plurality of transistor chips in parallel and turning them on/off simultaneously in a package. SOLUTION: In a semiconductor device having a large capacity which is used for an inverter, three IGBT chips are arranged on an insulation substrate 2. In this case, the chips 1a are arranged in zigzag manner, to connect them in parallel. Diode chips 1b are arranged in a region unoccupied by the chips 1a.
申请公布号 JP2002368192(A) 申请公布日期 2002.12.20
申请号 JP20010174731 申请日期 2001.06.08
申请人 FUJI ELECTRIC CO LTD 发明人 KOBAYASHI TAKATOSHI;BETSUDA SOHIKO;YOSHITO SHINICHI
分类号 H01L25/07;H01L25/18;(IPC1-7):H01L25/07 主分类号 H01L25/07
代理机构 代理人
主权项
地址