| 摘要 |
PROBLEM TO BE SOLVED: To realize overlap exposing of fine pattern and highly accurate evaluation of the patterns formed by accurately detecting position, width and interval or the like of the patterns on a wafer of semiconductor circuit. SOLUTION: The lighting beam to a specimen such as a wafer or/and the light beam reflected from the specimen is/are set to a predetermined spectral luminance or spectral transmittance, so that it becomes possible that distortion of detected waveform through multiple reflection due to film structure can be eliminated. Moreover, the numerical apertures for detection in each waveform is changed to realize matching of resolutions of images in each waveform. In addition, a pattern signal strength ratio of each waveform is changed by signal processing for image composition for the primary image of each waveforms isolated by a spectroscopic means. Moreover, Chromatic aberration generated in a detection optical system is compensated by compensating for the time base of pattern signal of each isolated wavelength (position coordinate axis on the pattern). Accordingly, it is now possible to accurately detect position of pattern of a wafer or the like, exposing of semiconductor circuit can be realized with higher yield for more fine patterns, and higher reliability and accuracy can also be attained for inspection. |
