| 摘要 |
PROBLEM TO BE SOLVED: To enable filling of metal into a fine hole made in a silicon substrate or the like and having a high aspect ratio without a space and to prevent generation of warpage or cracking in a specimen. SOLUTION: A silicon substrate 14 having a fine hole formed therein and a metallic sheet 15 are fixed by means of a specimen fixing jig 12 and positioned within a vacuum chamber 11. Thereafter, the vacuum chamber 11 is evacuated until the internal pressure of the chamber 11 reaches a predetermined vacuum level. At this time, the metallic sheet 15 is melted by a heating means 16 and then the chamber 11 is compressed with an inert gas up to an atmospheric pressure or higher. Thereby the melted metal is vacuum sucked into the fine hole. Next, the vacuum chamber is made open, the melted metal remaining on the specimen is removed, and thereafter the chamber is cooled down to the room temperature. Metal can be filled into the fine hole having a high aspect ratio without generating of a cavity or the like. Since the melted metal has a smaller heat capacity than that when compared with a method for immersing the metal into a melted metal bath or the like, no warpage or cracking takes place in the specimen. Excessive metal can be suppressed to a minimum level and its cost can be reduced.
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