| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve the dielectric strength, by making uniform the response of an NMOS output transistor to an electrostatic surge in the transistor. SOLUTION: This semiconductor device has an N-type diffusion layer 10N, which is formed on a semiconductor substrate 10S and defined by an element isolation region, a P-type diffusion layer 11P which is formed between a source region 11N and a drain region 12N, a P-type diffusion layer 12P which is formed between the source region and drain region, while surrounding the P-type diffusion layer 11P, a P-type diffusion layer 13P, which is formed adjacently to the P-type diffusion layer 12P, a gate electrode 10G which is defined by the source region and drain region and is formed on the P-type diffusion layer 12P, so that the P-type diffusion layer 11P is exposed, and a gate potential supply metal 10M, which is arranged over the P-type diffusion layer 11P and P-type diffusion layer 13P and electrically connected thereto.
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