| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor, having high throughput property and its manufacturing method which inserts a minimum required dummy pattern for improving high planarity, after CMP process. SOLUTION: In the semiconductor device has a surface planarized through chemical mechanical polishing, the semiconductor device surface is divided virtually into a plurality of regions to form a dummy pattern, having at least a difference of 10% or less between area proportions occupied by projecting or recessed regions of the divided regions; and a maximum to minimum ratio of 1.3 or less of proportions occupied by the projective or recessed regions of the divided regions or a difference of 30 nm or less, between a maximum height and a minimum height of the divided regions.
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