| 摘要 |
PROBLEM TO BE SOLVED: To provide a III-V semiconductor wafer becoming a substrate on which high performance semiconductor laser chips having uniform performance can be fabricated with a high yield. SOLUTION: In the method for processing a III-V semiconductor wafer, a wafer is sliced from a III-V semiconductor ingot (S1), orientation flat(OF) of the wafer is formed by cleavage (S2), dirsts and oxide films are removed from the OF surface by alkaline cleaning (SA1), and then a strain layer introduced at the time of slicing the wafer is removed by etching (S3).
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