发明名称 SEMICONDUCTOR SWITCHING DEVICE AND GATE DRIVE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor switching device which can prevent a gate drive cathode electrode from generation of strains, and to provide a gate drive. SOLUTION: This semiconductor switching device is equipped with an electrode 1 for cathode electrode connection, having a connection surface 1a which is connected to the cathode electrode of a semiconductor switching element, a bent part 1b which extends from the connection surface 1b, while being bent toward the gate electrode, and a projection part 1c projecting from the bent part 1b opposite the gate electrode; and the gate drive provided with an electrode for gate electrode connection which is connected to the gate electrode and the gate drive supplies a turn-off current between the gate electrode and cathode electrode. The electrode 1 for cathode electrode connection is provided with a cut 2, extending from the adjacent part in between the connection surface 1a and bent part 1b, the edge part of the projection part 1c.
申请公布号 JP2002368208(A) 申请公布日期 2002.12.20
申请号 JP20010176793 申请日期 2001.06.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKAO KENJI;MIZOHATA FUMIO
分类号 H01L29/744;H01L29/74;H02M1/00;(IPC1-7):H01L29/744 主分类号 H01L29/744
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