| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having fuses, which can be less influenced by the warpage of a wafer and can be made in high integration with a small fuse pitch. SOLUTION: An element formation region 30 surrounded by a dicing line region 50 is positioned on the surface of a semiconductor device. For example, a memory block 20 is positioned in the element formation region 30, and normal and redundant memory cells are formed within the memory block 20. A fuse box 1 is positioned in the vicinity of the memory block 20, and a plurality of fuses 1 are positioned within the fuse box 10. A focusing alignment mark 15 is positioned in the vicinity of the fuse box 10 or within the box 10.
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