SEMICONDUCTOR DEVICE HAVING LDD-TYPE SOURCE/DRAIN REGION AND PRODUCTION METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device, having an LDD-type source/drain region, and to provide production method therefor. SOLUTION: This semiconductor device is provided with at least one pair of gate patterns, located on a semiconductor substrate and LDD-type source/ drain regions formed on the semiconductor substrate on both the sides of each of gate patterns, the semiconductor substrate having the gate patterns and the LDD type source/drain region is covered with a uniform etching block film, and each of LDD-type source/drain region is exposed by a contact hole which penetrate a layer insulating film and the etching block film.