METHOD OF MANUFACTURING GROUP III NITRIDE FILM, SAPPHIRE SINGLE CRYSTAL SUBSTRATE FOR MANUFACTURING GROUP III NITRIDE FILM, AND SUBSTRATE FOR EPITAXIAL GROWTH

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a new group III nitride film, by which it is possible to form a group III nitride film containing low-dislocation Al on a sapphire single crystal substrate. SOLUTION: A surface nitride layer section 1B is made so that the nitrogen content at a depth of 10 Å from the surface may be 2 atom.% or over by arranging the sapphire single crystal substrate 1 in nitrogen-containing atmosphere such as ammonium atmosphere. Next, a group III nitride film 2 containing Al is formed on the surface nitride layer section 1B.