发明名称 III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE
摘要 PROBLEM TO BE SOLVED: To enable flip-chip type III nitride compound semiconductor light- emitting devices to be set reduced in dispersion of characteristics. SOLUTION: The surface of a substrate serving as a light-emitting surface in a flip-chip type III nitride compound semiconductor device is roughened to make radiation light scattered.
申请公布号 JP2002368263(A) 申请公布日期 2002.12.20
申请号 JP20010170909 申请日期 2001.06.06
申请人 TOYODA GOSEI CO LTD 发明人 KAMIMURA TOSHIYA;HASHIMURA MASAKI
分类号 H01L33/10;H01L33/12;H01L33/32;H01L33/62 主分类号 H01L33/10
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