| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a III-IV compound semiconductor which is high in in-plane uniformity and high mobility. SOLUTION: The flatness of a spacer 10 is enhanced by doping the spacer layer 10 with oxygen, when growing sequentially the crystals of a buffer layer 2, a channel layer 4, the spacer layer 10, an electron supply layer 5, and a contact layer 6 by supplying dopant material, group III material, group V material, and gas for dilution onto a heated substrate 1. As a result, the in-plane uniformity rises, and high mobility can be obtained.
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