| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a wiring of a semiconductor element, which can shorten the throughput time of a chamber provision at the time of forming a titanium film as a barrier metallic layer and titanium nitride film. SOLUTION: A conductive layer 110 and a dielectric layer 120 are sequentially formed on a semiconductor substrate 100 having a predetermined lower structure, on which a photosensitive film 130 is coated to form a contact hole forming site 140, the resultant substrate is subjected to contact hole etching using the photosensitive film 130 as a mask to form a contact hole 150, a first barrier metallic layer 163 is deposited on the entire dielectric layer 110 having the contact hole 150 formed therein, annealing is carried out, an insulating film 170 formed on a first barrier metallic layer 163 is removed by carrying out plasma processing, a second barrier metallic layer 166 is deposited thereon, tungsten is deposited on the second barrier metallic layer 166, and then a chemical mechanical polishing step is carried out thereover.
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