| 摘要 |
FIELD: microelectronics; manufacture of very-large-scale integrated circuits. SUBSTANCE: wafer to be cleaned is placed in vacuum chamber and its surface is treated with augmented jet of nitrogen and argon cryogenic aerosol doped with oxygen additive in environment of ultraviolet radiation whose wavelength is minimum 200 nm. EFFECT: enhanced effectiveness of cleaning rough surfaces from organic impurities. 1 tbl, 1 ex
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