| 摘要 |
PROBLEM TO BE SOLVED: To suppress variation in line width which may be produced in a photolithography process. SOLUTION: A plurality of types of semiconductor substrate 1 for forming different products are respectively provided with focus patterns 14f identical in height on scribe lines on the semiconductor substrates 1, and focusing is obtained with reference to these focus patterns. With the focus patterns 14f on a plurality of types of semiconductor substrate 1 identical in height as mentioned above, the focusing height can be made uniform by obtaining focusing with reference to the focus patterns 14f. Thus, variation in line width which may be produced in a photolithography process can be suppressed. |
