发明名称 |
METHOD FOR FORMING IRIDIUM OXIDE THIN FILM, AND ITS APPLICATION |
摘要 |
PROBLEM TO BE SOLVED: To form a fine and uniform Perovskite single-layer film containing lead having homogeneous surface morphology on an iridium oxide electrode film without interposing a platinum layer. SOLUTION: In a film formation method or its film-formed body, a seed layer is formed on the thin film of iridium oxide for crystallization, lead-based Perovskite type oxide is formed on it, and TiOx, PT, PZT, and the like are used as the seed layer.
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申请公布号 |
JP2002367985(A) |
申请公布日期 |
2002.12.20 |
申请号 |
JP20010169756 |
申请日期 |
2001.06.05 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
SOYAMA NOBUYUKI;MAKI KAZUMASA;FUJITA SATOSHI |
分类号 |
H01L27/04;H01L21/316;H01L21/822;H01L21/8246;H01L27/105;(IPC1-7):H01L21/316 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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