发明名称 METHOD FOR FORMING IRIDIUM OXIDE THIN FILM, AND ITS APPLICATION
摘要 PROBLEM TO BE SOLVED: To form a fine and uniform Perovskite single-layer film containing lead having homogeneous surface morphology on an iridium oxide electrode film without interposing a platinum layer. SOLUTION: In a film formation method or its film-formed body, a seed layer is formed on the thin film of iridium oxide for crystallization, lead-based Perovskite type oxide is formed on it, and TiOx, PT, PZT, and the like are used as the seed layer.
申请公布号 JP2002367985(A) 申请公布日期 2002.12.20
申请号 JP20010169756 申请日期 2001.06.05
申请人 MITSUBISHI MATERIALS CORP 发明人 SOYAMA NOBUYUKI;MAKI KAZUMASA;FUJITA SATOSHI
分类号 H01L27/04;H01L21/316;H01L21/822;H01L21/8246;H01L27/105;(IPC1-7):H01L21/316 主分类号 H01L27/04
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