| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device consisting of a multi-layer structure which is inexpensive and is easily manufactured. SOLUTION: DRAM chips 3a-3d are mounted on first - fourth PTP substrates 5a-5d, on which chip connection wirings 4 having the same pattern are formed using a flip-chip method, etc. Respective chip-mounted PTP substrates 5a-5d and respective first - fourth IVH substrates 7a-7d, having interlayer connection wirings 6 with different patterns, are laminated alternately along the direction of thickness thereof. The respective substrates 5a-5d and 7a-7d, which are laminated, are sandwiched from both sides in the laminating direction by a surface substrate 22, a power source ground substrate 23 and a ball-layer substrate 24, and they are overlapped so that positioning marks inscribed on the respective substrates are matched in the laminating direction. Thereafter, the respective overlapped substrates are compressed and bonded in the laminating direction, and a DRAM module 1 is manufactured. |
