| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which improves reliefing effect in redundancy and its reliability. SOLUTION: The semiconductor device comprises a plurality of memory macros MM1-MM5 provided on a semiconductor substrate 10, protective layers 15, 16, 17, 20 provided on the substrate 1 for covering the memory macros MM1-MM5, a plurality of rows of bumps 22 provided on the protective layers 15, 16, 17, 20 along the edges of these layers for transferring signals between the memory macros MM1-MM5 and external circuits and a fuse block FB having a plurality of fuse elements commonly used for the redundancy of the memory macros MM1-MM5. The fuse block is provided on a layer insulation film 17 beneath empty regions A1 on the protective layer 20. |
