| 摘要 |
PROBLEM TO BE SOLVED: To provide white light-emitting devices which are manufactured, without complicated manufacturing processes and enables uniform in light emission characteristics. SOLUTION: An N-type III nitride compound semiconductor layer, a III nitride compound semiconductor light-emitting layer, and a P-type III nitride compound semiconductor layer are successively stacked on a board for the formation of a light-emitting device; and a semiconductor layer which is formed of Znx Cd1-x Sy Se1-y (0<=x<=1, 0<=y<=1), receives a part of blue light emitted from a light-emitting layer, and emits yellow light is interposed between the N-type III nitride compound semiconductor layer and the light-emitting layer. |
