| 摘要 |
PROBLEM TO BE SOLVED: To improve the TFT characteristics by reducing amount of hydrogen H2 to be taken into a semiconductor thin film without any damage on the semiconductor thin film, in the plasma discharge process which is executed by the P-CVD apparatus for lift-up of a glass substrate having formed a semiconductor thin film from a lower electrode. SOLUTION: A glass substrate 3 is placed on a lower electrode 4 located within a reaction chamber 2, the reaction process chamber 2 is evacuated to the predetermined degree of vacuum condition to generate plasma after a semiconductor thin film is deposited on the glass substrate 3, hydrogen H2 is introduced into the reaction process chamber 2 evacuated to a predetermined degree of vacuum condition, and the glass substrate 3 is isolated from the lower electrode 4 while the plasma is generated.
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