| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment method for removing electrification being generated on a substrate by etching treatment, and to provide a plasma treatment apparatus. SOLUTION: A nitrogen or an oxygen gas is introduced by a gas supply apparatus 18, pressure in a vacuum container 1 is adjusted to 10 Pa, and a substrate 2 is lifted by approximately 1 mm by a small projection mechanism while high-frequency power with low power being 50 W or more is being applied, thus stably generating discharge via a creeped released electrons and ions between a substrate back and an electrode front 6a, neutralizing residual charge between both of them, and hence reducing particle adhesion due to the residual charge after plasma treatment.
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