| 摘要 |
PROBLEM TO BE SOLVED: To provide a III nitride compound semiconductor device, equipped with a new substrate. SOLUTION: A Ti isolation layer is formed on an auxiliary substrate of sapphire or the like, and a base player of TiN is formed on the Ti isolation layer. The base layer is used to make a III nitride compound semiconductor layer grow with high crystallinity. A sprayed layer is formed on the base layer by flame-spraying TiN on the base layer. Thereafter, the Ti layer is etched chemically to make the base layer exposed. A III nitride compound semiconductor layer is grown on the surface of the base layer. |
