| 摘要 |
PROBLEM TO BE SOLVED: To make a countermeasure for sustain-destruction and improvement of the write characteristics of a switching element compatible in small area in a voltage control circuit incorporated in a non-volatile memory. SOLUTION: When the state of the non-volatile memory transits from an erase state to a write state (read state), in a first transition mode, a first control signal PACT is made from 'H' to logic 'L' (a second control signal SLDRV is left logic 'L'), source line voltage Vsl is dropped from boosting voltage VPP of a boosting circuit 1 to power source voltage VDD by turning on a first P channel transistor 3 (a second P channel transistor 5 is kept in a 'on' state as it is). Then, in a second transition mode, source line voltage is dropped to the ground potential (0 V) by making a second control signal logic from 'L' to 'H', turning off the first P channel transistor and turning on a N cannel transistor 4. |
