| 摘要 |
PROBLEM TO BE SOLVED: To provide a high performance NMOS transistor and a high- performance PMOS transistor, using a distortion Si/SiGe layer on a silicon substrate on an insulator. SOLUTION: A metal oxide semiconductor transistor comprises a silicon substrate on an insulator having a substrate silicon layer therein, a silicon germanium layer disposed on the substrate silicon layer, and an upper silicon layer disposed on the silicon germanium layer. The substrate silicon layer, having thickness in the range of 10 to 40 nm, is used to be constituted in this manner, and hence the silicon germanium layer is in a compression distortion state, so that the upper silicon layer and the substrate silicon layer are set to a tensile distortion state. Accordingly, both the compression distortion SiGe layer and the tensile distortion Si layer can be provided, without enhancing the dislocation density. As a result, proper mobility of holes and electrons is obtained, and hence a device performance is improved.
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