发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: To provide a semiconductor memory device including a large capacity of non-volatile memory by matching the access time of a large capacity of non-volatile memory with the access time of a random access memory. CONSTITUTION: This semiconductor memory device is constituted of a non- volatile memory FLASH having a first reading time, a random access memory DRAM having a second reading time which is not less than 100 times as short as the first reading time, a circuit connected to the FLASH and the DRAM including a control circuit for controlling access to them, and a plurality of input and output terminals connected to the circuit. Therefore, it is possible to realize the matching of the access time by transferring the data of the FLASH to the DRAM, and performing an access to the DRAM. Also, it is possible to realize the matching and preservation of the data by rewriting the data from the DRAM to the FLASH as necessary.
申请公布号 KR20020095109(A) 申请公布日期 2002.12.20
申请号 KR20020032287 申请日期 2002.06.10
申请人 HITACHI, LTD. 发明人 AYUKAWA KAZUSHIGE;MIURA SEIJI
分类号 G06F12/16;G06F3/06;G06F12/00;G06F12/06;G11C5/02;G11C8/00;G11C11/00;G11C11/401;G11C11/406;G11C11/407;G11C11/412;G11C16/02;G11C16/04;G11C16/10;G11C16/32;(IPC1-7):G11C5/02 主分类号 G06F12/16
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