| 摘要 |
<p>The formation of a channel gate type field effect transistor for effectively suppressing a short channel effect with a shallow source-drain junction at a low resistance in an easy process. A method for manufacturing a channel gate type field effect transistor (100A) wherein an impurity introduced layer (13) serving as a source or a drain is formed by introducing an impurity into a semiconductor substrate (1), a channel (15) is penetrated in the impurity introduced layer, a gate insulation film (5) is formed in the bottom of the channel (15), and a gate (G) is so formed as to fill the channel (15) comprises dopant-activating laser annealing, before the gate (G) is formed, after the dopant is introduced into the semiconductor substrate (1).</p> |
