发明名称 |
Nonvolatile semiconductor memory device and programming method thereof |
摘要 |
A nonvolatile semiconductor memory device of the present invention has a well voltage detecting circuit. The well voltage detecting circuit detects whether a pocket p-type well voltage is equal to or is lower than a detection voltage (e.g., 0.1V) and outputs a detection signal at a high or low level. When the pocket p-type well voltage is identical to or lower than the detection voltage, a word line select signal generating circuit generates row select signals of respective rows in response to the detection signal. With this device, in case a well voltage of the pocket p-type well is increased due to applying a voltage into an unselected bit line, program and pass voltages are supplied to word lines at a point of time when the increased well voltage becomes lower than the detection voltage of the well voltage detecting circuit.
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申请公布号 |
US2002191443(A1) |
申请公布日期 |
2002.12.19 |
申请号 |
US20020131424 |
申请日期 |
2002.04.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE YEONG-TAEK;LIM YOUNG-HO |
分类号 |
G11C16/02;G11C16/04;G11C16/06;G11C16/12;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C11/34 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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