发明名称 |
Power semiconductor device |
摘要 |
A power semiconductor device comprises a power switching element having two main electrodes and one control electrode, a metal electrode connected to one of main electrodes of the power switching element, and a protection circuit for controlling an operation of the power switching element so that a main current flowing between the main electrodes of the power switching element is detected and the main current is limited when the detected main current is determined to be an overcurrent. The protection circuit detects the main current flowing through the power switching element by detecting a voltage between predetermined two points of the metal electrode. |
申请公布号 |
US2002190325(A1) |
申请公布日期 |
2002.12.19 |
申请号 |
US20010986594 |
申请日期 |
2001.11.09 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MOCHIZUKI KOUICHI |
分类号 |
H01L23/62;H01L29/68;H02H7/20;H02H9/02;H02H9/08;H02M1/00;H02M7/5387;H03K17/08;H03K17/082;(IPC1-7):H01L23/62 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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