Metal cell structure of metal programmable read only memory, has NMOS cell transistors which are shared by pair of bit cells selected by signals of word lines and virtual ground lines

摘要

The memory cell structure comprises NMOS cell transistors (n31,n32) which are shared by a pair of bit cells selected by signals of word lines (WL1,WL2) and virtual ground lines (VGND1,VGND2).