发明名称 |
Semiconductor device having bump electrodes |
摘要 |
A semiconductor device having a bump electrode comprising a substrate having a dielectric layer formed thereon, an aluminum contact pad on the substrate wherein at least a portion of the aluminum contact pad is exposed through the dielectric layer on the substrate. The aluminum contact pad is provided with an under bump metallurgy including a aluminum layer formed on the exposed portion of the aluminum contact pad, a nickel-vanadium layer formed on the aluminum layer and a titanium layer formed on the nickel-vanadium layer. A gold bump formed on the titanium layer acts as the bump electrode.
|
申请公布号 |
US2002190395(A1) |
申请公布日期 |
2002.12.19 |
申请号 |
US20010883216 |
申请日期 |
2001.06.19 |
申请人 |
ADVANCED SEMICONDUCTOR ENGINEERING, INC. |
发明人 |
FANG JEN KUANG;CHIANG CHING HUA;CHEN SHIH KUANG;WENG CHAU FU |
分类号 |
H01L21/60;(IPC1-7):H01L21/44;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|