发明名称 |
Method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer |
摘要 |
A method and system for using transmission spectroscopy to measure a temperature of a substrate (135). By passing light through a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the wafer. This in-situ method and system can be used as a feedback control in combination with a variable temperature substrate holder (182) to more accurately control the processing conditions of the substrate. By utilizing a multiplicity of measurement sites the variation of the temperature across the substrate (135) can also be measured.
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申请公布号 |
US2002189757(A1) |
申请公布日期 |
2002.12.19 |
申请号 |
US20020168544 |
申请日期 |
2002.07.02 |
申请人 |
DENTON MEDONA B.;JOHNSON WAYNE L.;SIRKIS MURRAY D. |
发明人 |
DENTON MEDONA B.;JOHNSON WAYNE L.;SIRKIS MURRAY D. |
分类号 |
G01J5/02;G01J5/00;G01K11/12;H01L21/00;H01L21/205;H01L21/3065;H01L21/66;(IPC1-7):C23C16/00;C23F1/00 |
主分类号 |
G01J5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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