发明名称 |
SEMICONDUCTOR DEVICES AND THEIR PERIPHERAL TERMINATION |
摘要 |
A semiconductor device, such as a power MOSFET, Schottky rectifier or p-n rectifier, has a voltage-sustaining zone (20) between a first (21, 23, 31a) and second (22) device regions adjacent to respective first and second opposite surfaces (11, 12) of a semiconductor body 10. Trenched field-shaping regions (40) including a resistive path (42) extend through the voltage-sustaining zone (20) to the underlying second region (22), so as to enhance the breakdown voltage of the device. The voltage-sustaining zone (20) and the trenched field-shaping regions (40) are present in both the active device area (A) and in the peripheral area (P) of the device. A further resistive path (53) extends across the first surface (11), outwardly over the peripheral area (P). This further resistive path (53) provides a potential divider that is connected to the respective resistive paths (42) of successive underlying trenched field-shaping regions (40) in the peripheral area (P). Thereby a gradual variation is achieved in the potential (V2) applied by the successive trenched field-shaping regions (40) in the peripheral area (P) of the voltage-sustaining zone (20). This advantageous peripheral termination reduces device susceptibility to deviations in the field profile in this peripheral area (P). |
申请公布号 |
WO02065552(A3) |
申请公布日期 |
2002.12.19 |
申请号 |
WO2002IB00431 |
申请日期 |
2002.02.13 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
VAN DALEN, ROB;ROCHEFORT, CHRISTELLE;HURKX, GODEFRIDUS, A., M. |
分类号 |
H01L29/47;H01L21/336;H01L21/8234;H01L27/04;H01L27/06;H01L27/088;H01L29/06;H01L29/40;H01L29/78;H01L29/861;H01L29/872 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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