| 发明名称 |
III nitride semiconductor substrate for ELO |
| 摘要 |
A III nitride semiconductor substrate for ELO is provided for forming a III nitride film whose surface is controlled independent of the film's thickness. A III nitride underlayer including at least Al is directly formed on a base made of e.g. a sapphire single crystal, not through a buffer layer formed at low temperature. After that, patterns made of e.g. SiO2 are formed on the underlayer.
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| 申请公布号 |
US2002192959(A1) |
申请公布日期 |
2002.12.19 |
| 申请号 |
US20020163256 |
申请日期 |
2002.06.05 |
| 申请人 |
NGK INSULATORS, LTD. |
发明人 |
SHIBATA TOMOHIKO;ASAI KEIICHIRO;SUMIYA SHIGEAKI;TANAKA MITSUHIRO |
| 分类号 |
C30B29/38;C23C16/34;C30B25/02;C30B25/04;C30B25/18;H01L21/20;H01L21/205;H01L29/201;H01L33/32;H01S5/323;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C30B29/38 |
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